SPP11N60C3XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

10 ns

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

125W

Fall Time (Typ) :

5 ns

Mounting Type :

Through Hole

Power Dissipation-Max :

125W Tc

Number of Pins :

3

Input Capacitance :

1.2nF

Continuous Drain Current (ID) :

11A

Min Operating Temperature :

-55°C

Turn-Off Delay Time :

44 ns

Drain to Source Resistance :

380mOhm

Voltage - Rated DC :

650V

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

Rds On (Max) @ Id, Vgs :

380mOhm @ 7A, 10V

Factory Lead Time :

8 Weeks

Lead Free :

Lead Free

Packaging :

Tube

Number of Elements :

1

Max Operating Temperature :

150°C

Drain to Source Breakdown Voltage :

600V

Gate to Source Voltage (Vgs) :

20V

Series :

CoolMOS™

Vgs(th) (Max) @ Id :

3.9V @ 500µA

Current Rating :

11A

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

650V

Package / Case :

TO-220-3

Rds On Max :

380 mΩ

Supplier Device Package :

PG-TO220-3-1

Mount :

Through Hole

Max Dual Supply Voltage :

600V

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

FET Type :

N-Channel

Halogen Free :

Halogen Free

Published :

2005

Rise Time :

5ns

Drive Voltage (Max Rds On,Min Rds On) :

10V