SPP11N60CFDHKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

7 ns

Power Dissipation :

125W

Drain-source On Resistance-Max :

0.44Ohm

Turn On Delay Time :

34 ns

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

Number of Elements :

1

Package / Case :

TO-220-3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5V @ 500µA

DS Breakdown Voltage-Min :

600V

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

440m Ω @ 7A, 10V

Mount :

Through Hole

Published :

2011

Pulsed Drain Current-Max (IDM) :

28A

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V

Operating Temperature :

-55°C~150°C TJ

JEDEC-95 Code :

TO-220AB

Rise Time :

18ns

Turn-Off Delay Time :

43 ns

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

600V

Additional Feature :

AVALANCHE RATED

FET Type :

N-Channel

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

3

Power Dissipation-Max :

125W Tc

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Series :

CoolMOS™

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Pbfree Code :

yes

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

11A