SPP10N10L

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Drain-source On Resistance-Max :

0.21Ohm

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Application :

SWITCHING

Series :

SIPMOS®

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

Continuous Drain Current (ID) :

10.3A

Power Dissipation-Max :

50W Tc

Input Capacitance (Ciss) (Max) @ Vds :

444pF @ 25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

2V @ 21μA

Additional Feature :

AVALANCHE RATED

Vgs (Max) :

±20V

Terminal Position :

Single

Number of Elements :

1

Number of Terminations :

3

Pin Count :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Voltage - Rated DC :

100V

Published :

2002

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

MATTE TIN

ECCN Code :

EAR99

Lead Free :

Lead Free

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

154m Ω @ 8.1A, 10V

Current Rating :

10.3A

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

10.3A Tc

Package / Case :

TO-220-3

Number of Pins :

3

Avalanche Energy Rating (Eas) :

60 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Through Hole

Pulsed Drain Current-Max (IDM) :

42.2A