SPP100N03S2L03

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-220AB

Drain-source On Resistance-Max :

0.0037Ohm

Mount :

Through Hole

Current Rating :

100A

Package / Case :

TO-220-3

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

Pin Count :

3

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2V @ 250μA

Mounting Type :

Through Hole

Power Dissipation-Max :

300W Tc

Rise Time :

67ns

Series :

OptiMOS™

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

Continuous Drain Current (ID) :

100A

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

3m Ω @ 80A, 10V

Terminal Position :

Single

Voltage - Rated DC :

30V

Pulsed Drain Current-Max (IDM) :

400A

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Input Capacitance (Ciss) (Max) @ Vds :

8180pF @ 25V

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

RoHS Status :

Non-RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Published :

2003

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin/Lead (Sn/Pb)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

810 mJ

JESD-609 Code :

e0

Packaging :

Tube

Lead Free :

Contains Lead

Peak Reflow Temperature (Cel) :

NOT SPECIFIED