SPP100N04S2L-03

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

230nC @ 10V

Packaging :

Tube

Package / Case :

TO-220-3

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Avalanche Energy Rating (Eas) :

810 mJ

Terminal Position :

Single

Voltage - Rated DC :

40V

Terminal Finish :

MATTE TIN

JESD-609 Code :

e3

Continuous Drain Current (ID) :

100A

Published :

2003

Power Dissipation-Max :

300W Tc

Lead Free :

Contains Lead

Mount :

Through Hole

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Current Rating :

100A

Drain-source On Resistance-Max :

0.0044Ohm

FET Type :

N-Channel

Transistor Application :

SWITCHING

Reach Compliance Code :

Unknown

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pulsed Drain Current-Max (IDM) :

400A

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 80A, 10V

RoHS Status :

Non-RoHS Compliant

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

2V @ 250μA

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Mounting Type :

Through Hole

Number of Elements :

1

Series :

OptiMOS™

JESD-30 Code :

R-PSFM-T3

Input Capacitance (Ciss) (Max) @ Vds :

8000pF @ 25V

Pin Count :

3