SPP10N10
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- Mfr.Part #
- SPP10N10
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 10.3A TO220-3
- Stock
- 7,084
- In Stock ：
- 7,084
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Voltage - Rated DC :
- 100V
- Lead Free :
- Lead Free
- Terminal Finish :
- MATTE TIN
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 19.4nC @ 10V
- Qualification Status :
- Not Qualified
- Avalanche Energy Rating (Eas) :
- 60 mJ
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Mount :
- Through Hole
- Reach Compliance Code :
- Unknown
- Power Dissipation :
- 50W
- Number of Pins :
- 3
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 426pF @ 25V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- Pin Count :
- 3
- Package / Case :
- TO-220-3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 4V @ 21μA
- Rds On (Max) @ Id, Vgs :
- 170m Ω @ 7.8A, 10V
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Current Rating :
- 10.3A
- Continuous Drain Current (ID) :
- 10.3A
- Published :
- 2001
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 10.3A Tc
- Series :
- SIPMOS®
- Additional Feature :
- AVALANCHE RATED
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-262AA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 50W Tc
- Operating Temperature :
- -55°C~175°C TJ
- Datasheets
- SPP10N10
N-Channel Tube 170m Ω @ 7.8A, 10V ±20V 426pF @ 25V 19.4nC @ 10V TO-220-3
SPP10N10 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 60 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 426pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 10.3A amps.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
SPP10N10 Features
the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 10.3A
SPP10N10 Applications
There are a lot of Infineon Technologies
SPP10N10 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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