SPP100N03S203

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Number of Terminations :

3

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

Non-RoHS Compliant

Terminal Position :

Single

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

30V

Pin Count :

3

Series :

OptiMOS™

Drain Current-Max (Abs) (ID) :

100A

Reach Compliance Code :

Unknown

JEDEC-95 Code :

TO-220AB

Terminal Finish :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ

Qualification Status :

COMMERCIAL

Input Capacitance (Ciss) (Max) @ Vds :

7.02pF @ 25V

Pbfree Code :

yes

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

Vgs(th) (Max) @ Id :

4V @ 250µA

Pulsed Drain Current-Max (IDM) :

400A

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 80A, 10V

Avalanche Energy Rating (Eas) :

810 mJ

Drain to Source Voltage (Vdss) :

30V

Drain-source On Resistance-Max :

0.0033Ohm

Surface Mount :

No

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Power Dissipation-Max :

300W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Number of Elements :

1