SPP100N03S2L-03

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2V @ 250μA

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

8180pF @ 25V

ECCN Code :

EAR99

Packaging :

Tube

Lead Free :

Contains Lead

Mount :

Through Hole

Terminal Finish :

Tin/Lead (Sn/Pb)

Terminal Position :

Single

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

400A

Voltage - Rated DC :

30V

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

100A

JEDEC-95 Code :

TO-220AB

Qualification Status :

Not Qualified

Published :

2003

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSFM-T3

Power Dissipation-Max :

300W Tc

Pin Count :

3

Rise Time :

67ns

Package / Case :

TO-220-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

RoHS Status :

Non-RoHS Compliant

Avalanche Energy Rating (Eas) :

810 mJ

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e0

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.0037Ohm

Rds On (Max) @ Id, Vgs :

3m Ω @ 80A, 10V

Current Rating :

100A

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Series :

OptiMOS™

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE