SPP15P10PLGHKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

Compliant

JESD-30 Code :

R-PSFM-T3

Series :

SIPMOS®

Input Capacitance (Ciss) (Max) @ Vds :

1490pF @ 25V

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

200m Ω @ 11.3A, 10V

Package / Case :

TO-220-3

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

100V

Power Dissipation-Max :

128W Tc

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

P-Channel

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

100V

Drain Current-Max (Abs) (ID) :

15A

Drain-source On Resistance-Max :

0.2Ohm

JEDEC-95 Code :

TO-220AB

Surface Mount :

No

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

60A

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

230 mJ

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

Vgs(th) (Max) @ Id :

2V @ 1.54mA

Published :

2011

Transistor Element Material :

SILICON