SPP15P10PHXKSA1
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- Mfr.Part #
- SPP15P10PHXKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 15A TO220-3
- Stock
- 52,673
- In Stock ：
- 52,673
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 128W Tc
- Operating Temperature :
- -55°C~175°C TJ
- Turn-Off Delay Time :
- 33 ns
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 15A
- Vgs(th) (Max) @ Id :
- 2.1V @ 1.54mA
- Rds On (Max) @ Id, Vgs :
- 240m Ω @ 10.6A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- P-Channel
- Pulsed Drain Current-Max (IDM) :
- 60A
- Terminal Finish :
- Tin (Sn)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1280pF @ 25V
- Vgs (Max) :
- ±20V
- Mounting Type :
- Through Hole
- Package / Case :
- TO-220-3
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2007
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Factory Lead Time :
- 12 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 128W
- Halogen Free :
- Halogen Free
- Series :
- SIPMOS®
- Additional Feature :
- AVALANCHE RATED
- Max Dual Supply Voltage :
- -100V
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 16 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 100V
- Rise Time :
- 23ns
- Number of Pins :
- 3
- JEDEC-95 Code :
- TO-220AB
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- -100V
- Drain-source On Resistance-Max :
- 0.24Ohm
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 9.5 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 48nC @ 10V
- Mount :
- Through Hole
- Datasheets
- SPP15P10PHXKSA1
P-Channel Tube 240m Ω @ 10.6A, 10V ±20V 1280pF @ 25V 48nC @ 10V 100V TO-220-3
SPP15P10PHXKSA1 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1280pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 15A.With a drain-source breakdown voltage of -100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -100V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 33 ns.Peak drain current for this device is 60A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9.5 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by -100V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (10V) reduces this device's overall power consumption.
SPP15P10PHXKSA1 Features
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 33 ns
based on its rated peak drain current 60A.
a 100V drain to source voltage (Vdss)
SPP15P10PHXKSA1 Applications
There are a lot of Infineon Technologies
SPP15P10PHXKSA1 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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