SPP15P10PGHKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Continuous Drain Current (ID) :

15A

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

100V

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

JESD-30 Code :

R-PSFM-T3

Drain-source On Resistance-Max :

0.24Ohm

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

240m Ω @ 10.6A, 10V

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2.1V @ 1.54mA

Published :

2007

Packaging :

Tube

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

230 mJ

Series :

SIPMOS®

Input Capacitance (Ciss) (Max) @ Vds :

1280pF @ 25V

RoHS Status :

RoHS Compliant

Package / Case :

TO-220-3

Power Dissipation-Max :

128W Tc

Factory Lead Time :

26 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

60A

Additional Feature :

AVALANCHE RATED

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Mounting Type :

Through Hole

Mount :

Through Hole

FET Type :

P-Channel

ECCN Code :

EAR99

Power Dissipation :

128W

Drive Voltage (Max Rds On,Min Rds On) :

10V