SPP15P10P H

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

15A

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Element Configuration :

Single

Transistor Element Material :

SILICON

Power Dissipation :

128W

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED

Input Capacitance (Ciss) (Max) @ Vds :

1280pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2007

Rise Time :

23ns

Power Dissipation-Max :

128W Tc

Packaging :

Tube

JEDEC-95 Code :

TO-220AB

Number of Pins :

3

Halogen Free :

Halogen Free

Factory Lead Time :

12 Weeks

Turn On Delay Time :

9.5 ns

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-220-3

Fall Time (Typ) :

16 ns

Series :

SIPMOS®

Drain-source On Resistance-Max :

0.24Ohm

Pbfree Code :

yes

Vgs (Max) :

±20V

JESD-609 Code :

e3

FET Type :

P-Channel

Max Dual Supply Voltage :

-100V

Pulsed Drain Current-Max (IDM) :

60A

Rds On (Max) @ Id, Vgs :

240m Ω @ 10.6A, 10V

Pin Count :

3

Drain to Source Voltage (Vdss) :

100V

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

33 ns

Mount :

Through Hole

Vgs(th) (Max) @ Id :

2.1V @ 1.54mA

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

-100V