SPP15N60C3XKSA1
- Mfr.Part #
- SPP15N60C3XKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 15A TO220-3
- Stock
- 27,367
- In Stock :
- 27,367
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 280mOhm @ 9.4A, 10V
- Vgs(th) (Max) @ Id :
- 3.9V @ 675µA
- Turn On Delay Time :
- 10 ns
- Input Capacitance :
- 1.66nF
- Current Rating :
- 15A
- Rds On Max :
- 280 mΩ
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Drain to Source Breakdown Voltage :
- 650V
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Voltage - Rated DC :
- 650V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±20V
- Series :
- CoolMOS™
- Input Capacitance (Ciss) (Max) @ Vds :
- 1660pF @ 25V
- Drain to Source Resistance :
- 250mOhm
- Supplier Device Package :
- PG-TO220-3-1
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 650V
- Length :
- 10.36mm
- Mounting Type :
- Through Hole
- Power Dissipation :
- 156W
- Min Operating Temperature :
- -55°C
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Width :
- 4.57mm
- Turn-Off Delay Time :
- 50 ns
- Factory Lead Time :
- 8 Weeks
- Published :
- 2005
- Height :
- 15.95mm
- Max Operating Temperature :
- 150°C
- RoHS Status :
- ROHS3 Compliant
- Max Dual Supply Voltage :
- 600V
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 15A
- Gate Charge (Qg) (Max) @ Vgs :
- 63nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 156W Tc
- Halogen Free :
- Halogen Free
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- Datasheets
- SPP15N60C3XKSA1

N-Channel Tube 280mOhm @ 9.4A, 10V ±20V 1660pF @ 25V 63nC @ 10V 650V TO-220-3
SPP15N60C3XKSA1 Overview
A device's maximal input capacitance is 1660pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 15A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 650V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 50 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 250mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 600V, it can supply the maximum voltage from two sources.This transistor requires a 650V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
SPP15N60C3XKSA1 Features
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 50 ns
single MOSFETs transistor is 250mOhm
a 650V drain to source voltage (Vdss)
SPP15N60C3XKSA1 Applications
There are a lot of Infineon Technologies
SPP15N60C3XKSA1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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