SPP12N50C3

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Power Dissipation (Max) :

125W (Tc)

Number of Elements :

1

Width :

4.57 mm

Continuous Drain Current (ID) :

11.6 A

Lead Free :

Lead Free

Package / Case :

TO-220-3

Channel Type :

N Channel

Current Rating :

11.6 A

Technology :

MOSFET (Metal Oxide)

Rds On Max :

380 mΩ

Supplier Device Package :

PG-TO220-3-1

Package Quantity :

500

Series :

CoolMOS™

Gate to Source Voltage (Vgs) :

20 V

Input Capacitance (Ciss) (Max) @ Vds :

1200 pF @ 25 V

FET Type :

N-Channel

Packaging :

Rail/Tube

Max Power Dissipation :

125 W

Drain to Source Breakdown Voltage :

500 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Halogen Free :

Halogen Free

Vgs (Max) :

±20V

Element Configuration :

Single

On-State Resistance :

380 mΩ

Package :

Bulk

Max Dual Supply Voltage :

500 V

Turn-On Delay Time :

10 ns

RoHS :

Compliant

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

380mOhm @ 7A, 10V

Product Status :

Active

Min Operating Temperature :

-55 °C

Max Operating Temperature :

150 °C

Mounting Type :

Through Hole

Drain to Source Resistance :

380 mΩ

Input Capacitance :

1.2 nF

Rise Time :

8 ns

Gate Charge (Qg) (Max) @ Vgs :

49 nC @ 10 V

Drain to Source Voltage (Vdss) :

500 V

Operating Temperature :

-55°C ~ 150°C (TJ)

FET Feature :

-

Height :

15.95 mm

Radiation Hardening :

No

Power Dissipation :

125

Current - Continuous Drain (Id) @ 25°C :

11.6A (Tc)

Turn-Off Delay Time :

45 ns

Length :

10.36 mm

Lifecycle Status :

Obsolete (Last Updated: 2 years ago)

Vgs(th) (Max) @ Id :

3.9V @ 500µA

REACH SVHC :

No SVHC

Voltage Rating (DC) :

560 V

Continuous Drain Current Id :

11.6