SPP11N80C3XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

85nC @ 10V

Avalanche Energy Rating (Eas) :

470 mJ

Power Dissipation-Max :

156W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JEDEC-95 Code :

TO-220AB

Packaging :

Tube

Drain to Source Voltage (Vdss) :

800V

Mounting Type :

Through Hole

Additional Feature :

AVALANCHE RATED

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

FET Type :

N-Channel

Vgs (Max) :

±20V

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

450m Ω @ 7.1A, 10V

Number of Terminations :

3

Vgs(th) (Max) @ Id :

3.9V @ 680μA

Package / Case :

TO-220-3

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.45Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

CoolMOS™

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

800V

Published :

2005

Surface Mount :

No

Pin Count :

3

Drain Current-Max (Abs) (ID) :

11A

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Factory Lead Time :

18 Weeks

Pulsed Drain Current-Max (IDM) :

33A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

JESD-30 Code :

R-PSFM-T3

Qualification Status :

Not Qualified