SPP11N65C3XKSA1
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- Mfr.Part #
- SPP11N65C3XKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- SPP11N65C3 - 650V-700V COOLMOS N
- Stock
- 43,624
- In Stock ：
- 43,624
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Supplier Device Package :
- PG-TO220-3-1
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 3.9V @ 500µA
- RoHS Status :
- RoHS Compliant
- Rise Time :
- 5ns
- Power Dissipation :
- 125W
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Max Operating Temperature :
- 150°C
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Continuous Drain Current (ID) :
- 11A
- Packaging :
- Tube
- Published :
- 2005
- Max Dual Supply Voltage :
- 650V
- Current Rating :
- 11A
- Drain to Source Resistance :
- 380mOhm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On Max :
- 380 mΩ
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- Voltage - Rated DC :
- 650V
- Turn On Delay Time :
- 10 ns
- Min Operating Temperature :
- -55°C
- Fall Time (Typ) :
- 5 ns
- Input Capacitance :
- 1.2nF
- Halogen Free :
- Halogen Free
- Package / Case :
- TO-220-3
- Drain to Source Voltage (Vdss) :
- 650V
- Series :
- CoolMOS™
- Power Dissipation-Max :
- 125W Tc
- Mount :
- Through Hole
- Factory Lead Time :
- 17 Weeks
- Rds On (Max) @ Id, Vgs :
- 380mOhm @ 7A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1200pF @ 25V
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 650V
- Turn-Off Delay Time :
- 44 ns
- Lead Free :
- Lead Free
- Datasheets
- SPP11N65C3XKSA1
N-Channel Tube 380mOhm @ 7A, 10V ±20V 1200pF @ 25V 60nC @ 10V 650V TO-220-3
SPP11N65C3XKSA1 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1200pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 11A.With a drain-source breakdown voltage of 650V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 650V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 44 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 380mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 650V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 650V.Using drive voltage (10V) reduces this device's overall power consumption.
SPP11N65C3XKSA1 Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 44 ns
single MOSFETs transistor is 380mOhm
a 650V drain to source voltage (Vdss)
SPP11N65C3XKSA1 Applications
There are a lot of Infineon Technologies
SPP11N65C3XKSA1 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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