SI4569DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

N and P-Channel

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Power - Max :

3.1W 3.2W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

5 mJ

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Series :

TrenchFET®

Terminal Form :

Gull wing

Resistance :

27mOhm

Vgs(th) (Max) @ Id :

2V @ 250μA

Width :

4mm

Terminal Finish :

Matte Tin (Sn)

Rds On (Max) @ Id, Vgs :

27m Ω @ 6A, 10V

Number of Elements :

2

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Base Part Number :

SI4569

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Drain Current-Max (Abs) (ID) :

6A

Continuous Drain Current (ID) :

6A

Fall Time (Typ) :

60 ns

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

8

Length :

5mm

FET Feature :

Standard

Gate to Source Voltage (Vgs) :

16V

Lead Free :

Lead Free

Published :

2016

Drain to Source Breakdown Voltage :

40V

Radiation Hardening :

No

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Rise Time :

105ns

Number of Pins :

8

Element Configuration :

Dual

Pin Count :

8

Turn-Off Delay Time :

60 ns

Max Power Dissipation :

2W

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

855pF @ 20V

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

7.6A 7.9A

Height :

1.5mm

Power Dissipation :

2W