SI4567DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

5A 4.4A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Pins :

8

Max Power Dissipation :

1.95W

Fall Time (Typ) :

93 ns

Drain to Source Breakdown Voltage :

40V

Height :

1.5mm

Rise Time :

93ns

Packaging :

Tape and Reel (TR)

Base Part Number :

SI4567

Time@Peak Reflow Temperature-Max (s) :

40

Mount :

Surface Mount

Transistor Application :

SWITCHING

Pbfree Code :

yes

Number of Terminations :

8

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Power - Max :

2.75W 2.95W

JESD-609 Code :

e3

Nominal Vgs :

2.2 V

Turn-Off Delay Time :

19 ns

Radiation Hardening :

No

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Width :

4mm

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Rds On (Max) @ Id, Vgs :

60m Ω @ 4.1A, 10V

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

REACH SVHC :

No SVHC

Drain Current-Max (Abs) (ID) :

4.1A

Resistance :

60mOhm

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Element Configuration :

Dual

FET Feature :

Standard

Power Dissipation :

2.75W

Input Capacitance (Ciss) (Max) @ Vds :

355pF @ 20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Lead Free :

Lead Free

Terminal Finish :

Matte Tin (Sn)

Series :

TrenchFET®

FET Type :

N and P-Channel

Length :

5mm

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

3.6A

Pin Count :

8

Threshold Voltage :

2.2V

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

16V