SI4559ADY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Resistance :

120mOhm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Series :

TrenchFET®

Number of Channels :

2

Transistor Application :

SWITCHING

Threshold Voltage :

1V

Transistor Element Material :

SILICON

Published :

2005

REACH SVHC :

Unknown

Input Capacitance (Ciss) (Max) @ Vds :

665pF @ 15V

Pbfree Code :

yes

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

FET Type :

N and P-Channel

Drain Current-Max (Abs) (ID) :

4.3A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Radiation Hardening :

No

Width :

4mm

Weight :

506.605978mg

Mounting Type :

Surface Mount

Max Power Dissipation :

2W

Current - Continuous Drain (Id) @ 25°C :

5.3A 3.9A

Vgs(th) (Max) @ Id :

3V @ 250µA

Power - Max :

3.1W 3.4W

Number of Terminations :

8

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

2W

Base Part Number :

SI4559

Lead Free :

Lead Free

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Rds On (Max) @ Id, Vgs :

58m Ω @ 4.3A, 10V

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

30 ns

Dual Supply Voltage :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Termination :

SMD/SMT

Continuous Drain Current (ID) :

4.5A

FET Feature :

Logic Level Gate

Drain to Source Breakdown Voltage :

60V

Turn-Off Delay Time :

40 ns

Pin Count :

8

Rise Time :

70ns

Factory Lead Time :

14 Weeks

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Length :

5mm

Avalanche Energy Rating (Eas) :

6.1 mJ

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Height :

1.55mm

Element Configuration :

Dual

Fall Time (Typ) :

30 ns

Number of Elements :

2