RS1E350BNTB1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2.5V @ 1mA

FET Type :

N-Channel

Manufacturer :

Rohm Semiconductor

RoHS :

Details

Minimum Operating Temperature :

- 55 C

Drain to Source Voltage (Vdss) :

30 V

Channel Mode :

Enhancement

Series :

-

Transistor Polarity :

N-Channel

Rds On (Max) @ Id, Vgs :

1.7mOhm @ 35A, 10V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Product Category :

MOSFET

Configuration :

Single

Power Dissipation (Max) :

3W (Ta), 35W (Tc)

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Mounting Style :

SMD/SMT

Product Type :

MOSFET

Supplier Device Package :

8-HSOP

Rise Time :

215 ns

Current - Continuous Drain (Id) @ 25°C :

35A (Ta), 80A (Tc)

Input Capacitance (Ciss) (Max) @ Vds :

7900 pF @ 15 V

Package :

Digi-Reel?

Number of Channels :

1 Channel

Package / Case :

8-PowerTDFN

FET Feature :

-

Brand :

Rohm Semiconductor

Product Status :

Active

Packaging :

MouseReel

Maximum Operating Temperature :

+ 150 C

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

185 nC @ 10 V

Subcategory :

MOSFETs