RS1E321GNTB1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.0029Ohm

Pulsed Drain Current-Max (IDM) :

128A

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Power Dissipation-Max :

3W Ta

Package / Case :

8-PowerTDFN

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Surface Mount :

yes

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

42.8nC @ 10V

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Packaging :

Cut Tape (CT)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

150°C TJ

JESD-30 Code :

R-PDSO-F5

Drain Current-Max (Abs) (ID) :

32A

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

32A Ta 80A Tc

Number of Terminations :

5

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

2850pF @ 15V

Rds On (Max) @ Id, Vgs :

2.1m Ω @ 32A, 10V

DS Breakdown Voltage-Min :

30V

Factory Lead Time :

16 Weeks

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

30V

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

77 mJ

Terminal Form :

Flat