RQ3E180GNTB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Case Connection :

DRAIN

Operating Temperature :

150°C TJ

Fall Time (Typ) :

10.2 ns

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

22.4nC @ 10V

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

20 Weeks

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0055Ohm

Pulsed Drain Current-Max (IDM) :

72A

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-F5

Continuous Drain Current (ID) :

18A

Number of Terminations :

5

Mount :

Surface Mount

Package / Case :

8-PowerVDFN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

ECCN Code :

EAR99

Power Dissipation-Max :

2W Ta

Number of Pins :

8

Rise Time :

6.9ns

Terminal Form :

Flat

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1520pF @ 15V

Turn-Off Delay Time :

56.8 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn On Delay Time :

16.5 ns

Element Configuration :

Single

Transistor Application :

SWITCHING

Published :

2013

Drain to Source Breakdown Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

18A Ta

Rds On (Max) @ Id, Vgs :

4.3m Ω @ 18A, 10V

Number of Channels :

1

Gate to Source Voltage (Vgs) :

20V