R6509KNXC7G

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1 Channel

FET Feature :

-

Transistor Type :

Power MOSFET

MSL :

MSL 1 - Unlimited

Power Dissipation (Max) :

48W (Tc)

Current - Continuous Drain (Id) @ 25°C :

9A (Ta)

Qualification :

-

Drain to Source Voltage (Vdss) :

650 V

Product Type :

MOSFET

Supplier Device Package :

TO-220FM

Manufacturer :

Rohm Semiconductor

Operating Temperature :

150°C (TJ)

FET Type :

N-Channel

Package / Case :

TO-220-3 Full Pack

Channel Mode :

Enhancement

Power Dissipation :

48W

Gate Charge (Qg) (Max) @ Vgs :

16.5 nC @ 10 V

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Package :

Tube

Maximum Operating Temperature :

+ 150 C

Subcategory :

MOSFETs

Product Status :

Active

Transistor Polarity :

N-Channel

Drive Voltage (Max Rds On, Min Rds On) :

10V

Mounting Style :

Through Hole

RoHS :

Details

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

540 pF @ 25 V

Brand :

Rohm Semiconductor

Rds On (Max) @ Id, Vgs :

585mOhm @ 2.8A, 10V

Rise Time :

20 ns

Configuration :

Single

Product Category :

MOSFET

Channel Type :

N Channel

Continuous Drain Current Id :

9A

Series :

-

Minimum Operating Temperature :

- 55 C

Vgs(th) (Max) @ Id :

5V @ 230μA