R6504ENJTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 130µA

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

150°C TJ

Rds On (Max) @ Id, Vgs :

1.05 Ω @ 1.5A, 10V

Transistor Application :

SWITCHING

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

650V

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

4A

Power Dissipation-Max :

58W Tc

Input Capacitance (Ciss) (Max) @ Vds :

220pF @ 25V

Pulsed Drain Current-Max (IDM) :

12A

DS Breakdown Voltage-Min :

650V

Avalanche Energy Rating (Eas) :

34.8 mJ

Number of Elements :

1

Surface Mount :

yes

Factory Lead Time :

8 Weeks

Terminal Form :

Gull wing

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2