R6509ENJTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

585m Ω @ 2.8A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

9A

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

650V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

158 mJ

Vgs(th) (Max) @ Id :

4V @ 230μA

Operating Temperature :

150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

9A Tc

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.585Ohm

DS Breakdown Voltage-Min :

650V

Pulsed Drain Current-Max (IDM) :

27A

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

8 Weeks

Case Connection :

DRAIN

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Input Capacitance (Ciss) (Max) @ Vds :

430pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

94W Tc

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Number of Terminations :

2