R6509END3TL1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

9A (Tc)

Product Status :

Active

Minimum Operating Temperature :

- 55 C

Package Type :

DPAK (TO-252)

Input Capacitance (Ciss) (Max) @ Vds :

430 pF @ 25 V

Rise Time :

30 ns

Pin Count :

3

Maximum Operating Temperature :

+ 150 C

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature :

150°C (TJ)

Series :

-

Number of Channels :

1 Channel

Transistor Polarity :

N-Channel

FET Feature :

-

Supplier Device Package :

TO-252

Package :

Digi-Reel?

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 230μA

Manufacturer :

Rohm Semiconductor

Power Dissipation :

94W

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

650 V

FET Type :

N-Channel

Channel Mode :

Enhancement

Product Category :

MOSFET

Gate Charge (Qg) (Max) @ Vgs :

24 nC @ 10 V

Brand :

Rohm Semiconductor

Configuration :

Single

Qualification :

-

Number of Elements per Chip :

1

Power Dissipation (Max) :

94W (Tc)

Continuous Drain Current Id :

9A

Product Type :

MOSFET

RoHS :

Details

Subcategory :

MOSFETs

Mounting Style :

SMD/SMT

Channel Type :

N Channel

Rds On (Max) @ Id, Vgs :

585mOhm @ 2.8A, 10V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Packaging :

Cut Tape