R6507ENXC7G

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Product Category :

MOSFET

Subcategory :

MOSFETs

Drain to Source Voltage (Vdss) :

650 V

Qualification :

-

RoHS :

Details

Vgs (Max) :

±20V

Operating Temperature :

150°C (TJ)

Package / Case :

TO-220-3 Full Pack

Maximum Operating Temperature :

+ 150 C

Brand :

Rohm Semiconductor

MSL :

MSL 1 - Unlimited

Manufacturer :

Rohm Semiconductor

Drive Voltage (Max Rds On, Min Rds On) :

10V

Mounting Style :

Through Hole

Power Dissipation :

46W

Transistor Type :

Power MOSFET

Current - Continuous Drain (Id) @ 25°C :

7A (Ta)

Package :

Tube

Product Type :

MOSFET

FET Feature :

-

Number of Channels :

1 Channel

Input Capacitance (Ciss) (Max) @ Vds :

390 pF @ 25 V

Product Status :

Active

Rds On (Max) @ Id, Vgs :

665mOhm @ 2.4A, 10V

FET Type :

N-Channel

Series :

-

Continuous Drain Current Id :

7A

Minimum Operating Temperature :

- 55 C

Transistor Polarity :

N-Channel

Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 200μA

Supplier Device Package :

TO-220FM

Gate Charge (Qg) (Max) @ Vgs :

20 nC @ 10 V

Channel Type :

N Channel

Packaging :

Tube

Channel Mode :

Enhancement

Mounting Type :

Through Hole

Rise Time :

25 ns

Power Dissipation (Max) :

46W (Tc)