R6507KNJTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

78W Tc

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.665Ohm

Terminal Form :

Gull wing

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Drain to Source Voltage (Vdss) :

650V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

5V @ 200μA

Case Connection :

DRAIN

Number of Elements :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Avalanche Energy Rating (Eas) :

136 mJ

Pulsed Drain Current-Max (IDM) :

21A

Gate Charge (Qg) (Max) @ Vgs :

14.5nC @ 10V

Rds On (Max) @ Id, Vgs :

665m Ω @ 2.4A, 10V

Drain Current-Max (Abs) (ID) :

7A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

470pF @ 25V

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Terminal Position :

Single

Factory Lead Time :

8 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

650V

Number of Terminations :

2