R6504ENXC7G

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Polarity :

N-Channel

Power Dissipation (Max) :

40W (Tc)

Continuous Drain Current Id :

4A

Product Category :

MOSFET

Vgs (Max) :

±20V

Package / Case :

TO-220-3 Full Pack

Operating Temperature :

150°C (TJ)

FET Type :

N-Channel

Rise Time :

20 ns

Transistor Type :

Power MOSFET

Product Status :

Active

FET Feature :

-

Power Dissipation :

40W

Mounting Type :

Through Hole

RoHS :

Details

Manufacturer :

Rohm Semiconductor

Input Capacitance (Ciss) (Max) @ Vds :

220 pF @ 25 V

Mounting Style :

Through Hole

Minimum Operating Temperature :

- 55 C

Maximum Operating Temperature :

+ 150 C

Number of Channels :

1 Channel

Supplier Device Package :

TO-220FM

Channel Type :

N Channel

Product Type :

MOSFET

Configuration :

Single

Brand :

Rohm Semiconductor

Subcategory :

MOSFETs

Series :

-

Gate Charge (Qg) (Max) @ Vgs :

15 nC @ 10 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Package :

Tube

Drain to Source Voltage (Vdss) :

650 V

Rds On (Max) @ Id, Vgs :

1.05Ohm @ 1.5A, 10V

MSL :

MSL 1 - Unlimited

Channel Mode :

Enhancement

Current - Continuous Drain (Id) @ 25°C :

4A (Ta)

Vgs(th) (Max) @ Id :

4V @ 130µA

Qualification :

-

Packaging :

Tube