R6504END3TL1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Subcategory :

MOSFETs

Brand :

Rohm Semiconductor

Operating Temperature :

150°C

Input Capacitance (Ciss) (Max) @ Vds :

220 pF @ 25 V

Power Dissipation (Max) :

58W (Tc)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

FET Type :

N-Channel

Pin Count :

3

Product Type :

MOSFET

Minimum Operating Temperature :

- 55 C

Rise Time :

20 ns

Manufacturer :

Rohm Semiconductor

Number of Channels :

1 Channel

RoHS :

Details

Channel Type :

N Channel

Drive Voltage (Max Rds On, Min Rds On) :

10V

Packaging :

Cut Tape

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 130µA

Supplier Device Package :

TO-252

Vgs (Max) :

±20V

Number of Elements per Chip :

1

Package :

Digi-Reel?

Power Dissipation :

58W

Transistor Polarity :

N-Channel

Mounting Style :

SMD/SMT

Maximum Operating Temperature :

+ 150 C

Series :

-

Package Type :

DPAK (TO-252)

Gate Charge (Qg) (Max) @ Vgs :

15 nC @ 10 V

Rds On (Max) @ Id, Vgs :

1.05Ohm @ 1.5A, 10V

FET Feature :

-

Product Category :

MOSFET

Qualification :

-

Drain to Source Voltage (Vdss) :

650 V

Product Status :

Active

Channel Mode :

Enhancement

Current - Continuous Drain (Id) @ 25°C :

4A (Tc)

Configuration :

Single

Continuous Drain Current Id :

4A