R6507END3TL1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer :

Rohm Semiconductor

RoHS :

Details

Package Type :

DPAK (TO-252)

Drive Voltage (Max Rds On, Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

7A (Tc)

FET Feature :

-

Qualification :

-

Channel Type :

N Channel

Supplier Device Package :

TO-252

Packaging :

Cut Tape

Continuous Drain Current Id :

7A

FET Type :

N-Channel

Product Status :

Active

Maximum Operating Temperature :

+ 150 C

Input Capacitance (Ciss) (Max) @ Vds :

390 pF @ 25 V

Operating Temperature :

150°C (TJ)

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

665mOhm @ 2.4A, 10V

Drain to Source Voltage (Vdss) :

650 V

Minimum Operating Temperature :

- 55 C

Rise Time :

25 ns

Power Dissipation :

78W

Series :

-

Power Dissipation (Max) :

78W (Tc)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Package :

Digi-Reel?

Product Category :

MOSFET

Product Type :

MOSFET

Gate Charge (Qg) (Max) @ Vgs :

20 nC @ 10 V

Mounting Style :

SMD/SMT

Number of Elements per Chip :

1

Vgs(th) (Max) @ Id :

4V @ 200μA

Transistor Polarity :

N-Channel

Configuration :

Single

Pin Count :

3

Vgs (Max) :

±20V

Channel Mode :

Enhancement

Brand :

Rohm Semiconductor

Subcategory :

MOSFETs

Number of Channels :

1 Channel