PDTA143XQAZ

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Number of Elements :

1

JESD-30 Code :

R-PDSO-N3

Reference Standard :

AEC-Q101; IEC-60134

Series :

Automotive, AEC-Q101

Max Power Dissipation :

280mW

Terminal Position :

Dual

Factory Lead Time :

4 Weeks

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

1μA

Transistor Type :

PNP - Pre-Biased

Collector Emitter Voltage (VCEO) :

100mV

Power - Max :

280mW

Frequency - Transition :

180MHz

Published :

2014

Vce Saturation (Max) @ Ib, Ic :

100mV @ 500µA, 10mA

Mount :

Surface Mount

Mounting Type :

Surface Mount

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 2.1

Terminal Form :

NO LEAD

Polarity/Channel Type :

PNP

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Resistor - Base (R1) :

4.7 k Ω

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 10mA 5V

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Resistor - Emitter Base (R2) :

10 k Ω

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

50V

Case Connection :

COLLECTOR

Max Collector Current :

100mA

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Package / Case :

3-XDFN Exposed Pad

Pin Count :

3

Transition Frequency :

180MHz