PDTA113EM,315

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Terminal Finish :

Tin (Sn)

Vce Saturation (Max) @ Ib, Ic :

150mV @ 1.5mA, 30mA

Transistor Application :

SWITCHING

Number of Terminations :

3

Polarity :

PNP

Published :

2009

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

260

Base Part Number :

PDTA113

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 40mA 5V

Element Configuration :

Single

Pin Count :

3

Max Operating Temperature :

150°C

Resistor - Emitter Base (R2) :

1 k Ω

Lead Free :

Lead Free

Resistor - Base (R1) :

1 k Ω

Max Breakdown Voltage :

50V

Terminal Position :

BOTTOM

Factory Lead Time :

8 Weeks

Collector Emitter Voltage (VCEO) :

50V

Min Operating Temperature :

-65°C

Mount :

Surface Mount

Case Connection :

COLLECTOR

Current - Collector Cutoff (Max) :

1μA

Package / Case :

SC-101, SOT-883

Max Power Dissipation :

250mW

Transistor Type :

PNP - Pre-Biased

Mounting Type :

Surface Mount

Number of Pins :

3

Number of Elements :

1

Collector Emitter Breakdown Voltage :

50V

Radiation Hardening :

No

Max Collector Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)