PDTA113EM,315

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Transistor Type :

PNP - Pre-Biased

Element Configuration :

Single

Resistor - Base (R1) :

1 k Ω

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

50V

Pin Count :

3

Vce Saturation (Max) @ Ib, Ic :

150mV @ 1.5mA, 30mA

Transistor Application :

SWITCHING

Polarity :

PNP

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Max Operating Temperature :

150°C

Case Connection :

COLLECTOR

RoHS Status :

ROHS3 Compliant

Max Collector Current :

100mA

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Radiation Hardening :

No

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

PDTA113

Collector Emitter Breakdown Voltage :

50V

Terminal Position :

BOTTOM

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

8 Weeks

Number of Terminations :

3

Min Operating Temperature :

-65°C

Max Breakdown Voltage :

50V

Published :

2009

Current - Collector Cutoff (Max) :

1μA

Max Power Dissipation :

250mW

Package / Case :

SC-101, SOT-883

Lead Free :

Lead Free

Number of Pins :

3

Resistor - Emitter Base (R2) :

1 k Ω

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 40mA 5V