PDTA113ZE,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Resistor - Emitter Base (R2) :

10 k Ω

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 5V

ECCN Code :

EAR99

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 10

Power Dissipation-Max (Abs) :

0.15W

JESD-609 Code :

e3

Surface Mount :

yes

Current - Collector Cutoff (Max) :

1μA

Pin Count :

3

Current - Collector (Ic) (Max) :

100mA

Mounting Type :

Surface Mount

Power - Max :

150mW

Operating Temperature (Max) :

150°C

Number of Terminations :

3

Terminal Form :

Gull wing

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Published :

2009

Terminal Position :

Dual

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

PNP - Pre-Biased

Polarity/Channel Type :

PNP

Resistor - Base (R1) :

1 k Ω

JESD-30 Code :

R-PDSO-G3

Package / Case :

SC-75, SOT-416

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Transistor Element Material :

SILICON

Voltage - Collector Emitter Breakdown (Max) :

50V

Base Part Number :

PDTA113

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant