PDTA113EM,315

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Collector Emitter Voltage (VCEO) :

50V

Radiation Hardening :

No

Element Configuration :

Single

Transistor Type :

PNP - Pre-Biased

Current - Collector Cutoff (Max) :

1μA

Min Operating Temperature :

-65°C

Max Collector Current :

100mA

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 40mA 5V

Case Connection :

COLLECTOR

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Packaging :

Tape and Reel (TR)

Published :

2009

Collector Emitter Breakdown Voltage :

50V

Terminal Position :

BOTTOM

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Base Part Number :

PDTA113

Max Operating Temperature :

150°C

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Resistor - Base (R1) :

1 k Ω

Polarity :

PNP

Pin Count :

3

Package / Case :

SC-101, SOT-883

JESD-609 Code :

e3

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Number of Elements :

1

Max Breakdown Voltage :

50V

Mount :

Surface Mount

Max Power Dissipation :

250mW

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

150mV @ 1.5mA, 30mA

Factory Lead Time :

8 Weeks

Resistor - Emitter Base (R2) :

1 k Ω

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99