PDTA113EM,315

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Terminal Finish :

Tin (Sn)

Max Operating Temperature :

150°C

Max Collector Current :

100mA

Mounting Type :

Surface Mount

Current - Collector Cutoff (Max) :

1μA

Max Breakdown Voltage :

50V

Resistor - Base (R1) :

1 k Ω

Max Power Dissipation :

250mW

Collector Emitter Breakdown Voltage :

50V

JESD-609 Code :

e3

Published :

2009

Number of Pins :

3

Transistor Type :

PNP - Pre-Biased

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Pin Count :

3

Collector Emitter Voltage (VCEO) :

50V

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Time@Peak Reflow Temperature-Max (s) :

30

Vce Saturation (Max) @ Ib, Ic :

150mV @ 1.5mA, 30mA

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity :

PNP

Factory Lead Time :

8 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 40mA 5V

Base Part Number :

PDTA113

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Min Operating Temperature :

-65°C

Radiation Hardening :

No

Case Connection :

COLLECTOR

Number of Terminations :

3

Package / Case :

SC-101, SOT-883

Transistor Application :

SWITCHING

Number of Elements :

1

Terminal Position :

BOTTOM

Resistor - Emitter Base (R2) :

1 k Ω

Peak Reflow Temperature (Cel) :

260