PDTA113EM,315

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Collector Emitter Voltage (VCEO) :

50V

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Current - Collector Cutoff (Max) :

1μA

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Min Operating Temperature :

-65°C

Vce Saturation (Max) @ Ib, Ic :

150mV @ 1.5mA, 30mA

Max Operating Temperature :

150°C

Max Power Dissipation :

250mW

Resistor - Base (R1) :

1 k Ω

Collector Emitter Breakdown Voltage :

50V

Published :

2009

Polarity :

PNP

Base Part Number :

PDTA113

Resistor - Emitter Base (R2) :

1 k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

BOTTOM

Factory Lead Time :

8 Weeks

Number of Elements :

1

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Pin Count :

3

Mount :

Surface Mount

Case Connection :

COLLECTOR

Lead Free :

Lead Free

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Transistor Type :

PNP - Pre-Biased

Package / Case :

SC-101, SOT-883

Number of Terminations :

3

Max Breakdown Voltage :

50V

Mounting Type :

Surface Mount

Max Collector Current :

100mA

Element Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 40mA 5V