PDTA113EE,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 40mA 5V

Peak Reflow Temperature (Cel) :

260

Resistor - Emitter Base (R2) :

1 k Ω

RoHS Status :

ROHS3 Compliant

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Number of Elements :

1

Pin Count :

3

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

150mV @ 1.5mA, 30mA

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

Number of Terminations :

3

Package / Case :

SC-75, SOT-416

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Transistor Type :

PNP - Pre-Biased

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Current - Collector (Ic) (Max) :

100mA

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Polarity/Channel Type :

PNP

Qualification Status :

Not Qualified

Terminal Finish :

Tin (Sn)

Published :

2009

Resistor - Base (R1) :

1 k Ω

Current - Collector Cutoff (Max) :

1μA

Operating Temperature (Max) :

150°C

Power Dissipation-Max (Abs) :

0.15W

Voltage - Collector Emitter Breakdown (Max) :

50V

Terminal Position :

Dual

JESD-30 Code :

R-PDSO-G3

Base Part Number :

PDTA113

Power - Max :

150mW