PDTA113EE,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Voltage - Collector Emitter Breakdown (Max) :

50V

Peak Reflow Temperature (Cel) :

260

Transistor Type :

PNP - Pre-Biased

JESD-609 Code :

e3

Package / Case :

SC-75, SOT-416

Number of Elements :

1

Power Dissipation-Max (Abs) :

0.15W

Operating Temperature (Max) :

150°C

Transistor Application :

SWITCHING

Terminal Position :

Dual

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Terminal Form :

Gull wing

Current - Collector Cutoff (Max) :

1μA

Polarity/Channel Type :

PNP

JESD-30 Code :

R-PDSO-G3

Resistor - Emitter Base (R2) :

1 k Ω

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Resistor - Base (R1) :

1 k Ω

Surface Mount :

yes

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Published :

2009

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

PDTA113

Current - Collector (Ic) (Max) :

100mA

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Vce Saturation (Max) @ Ib, Ic :

150mV @ 1.5mA, 30mA

Pin Count :

3

Power - Max :

150mW

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 40mA 5V