PDTA113ET,215

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Resistor - Emitter Base (R2) :

1 k Ω

Mounting Type :

Surface Mount

Max Breakdown Voltage :

50V

Terminal Position :

Dual

Collector Emitter Breakdown Voltage :

50V

Packaging :

Tape and Reel (TR)

Min Operating Temperature :

-65°C

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Number of Pins :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 40mA 5V

Vce Saturation (Max) @ Ib, Ic :

150mV @ 1.5mA, 30mA

Max Collector Current :

100mA

Factory Lead Time :

4 Weeks

Number of Elements :

1

Element Configuration :

Single

Transistor Application :

SWITCHING

Max Operating Temperature :

150°C

Lead Free :

Lead Free

Published :

2009

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Radiation Hardening :

No

Base Part Number :

PDTA113

Time@Peak Reflow Temperature-Max (s) :

30

Collector Emitter Voltage (VCEO) :

50V

Terminal Form :

Gull wing

Number of Terminations :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Power Dissipation :

250mW

Mount :

Surface Mount

ECCN Code :

EAR99

Polarity :

PNP

Pin Count :

3

Resistor - Base (R1) :

1 k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Transistor Type :

PNP - Pre-Biased

Current - Collector Cutoff (Max) :

1μA

Peak Reflow Temperature (Cel) :

260