PDTA113EU,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Radiation Hardening :

No

Base Part Number :

PDTA113

Transistor Application :

SWITCHING

Number of Pins :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 40mA 5V

Published :

2009

Polarity :

PNP

Resistor - Base (R1) :

1 k Ω

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

150mV @ 1.5mA, 30mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Factory Lead Time :

4 Weeks

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Type :

PNP - Pre-Biased

Terminal Position :

Dual

Current - Collector Cutoff (Max) :

1μA

Package / Case :

SC-70, SOT-323

Packaging :

Tape and Reel (TR)

Max Collector Current :

100mA

Number of Elements :

1

Max Power Dissipation :

200mW

Collector Emitter Breakdown Voltage :

50V

Terminal Form :

Gull wing

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Number of Terminations :

3

Pin Count :

3

Mount :

Surface Mount

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

50V

Max Operating Temperature :

150°C

Resistor - Emitter Base (R2) :

1 k Ω

Min Operating Temperature :

-65°C

Lead Free :

Lead Free