PDTA113EMB,315

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Transition Frequency :

180MHz

Terminal Position :

BOTTOM

Current - Collector Cutoff (Max) :

100nA ICBO

Factory Lead Time :

8 Weeks

Max Power Dissipation :

250mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 40mA 5V

Collector Emitter Voltage (VCEO) :

150mV

Package / Case :

3-XFDFN

Vce Saturation (Max) @ Ib, Ic :

150mV @ 1.5mA, 30mA

Polarity/Channel Type :

PNP

Collector Emitter Breakdown Voltage :

50V

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Mount :

Surface Mount

Base Part Number :

PDTA113

Resistor - Base (R1) :

1 k Ω

Number of Pins :

3

Frequency - Transition :

180MHz

Mounting Type :

Surface Mount

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Resistor - Emitter Base (R2) :

1 k Ω

RoHS Status :

ROHS3 Compliant

Max Collector Current :

100mA

Number of Terminations :

3

JESD-609 Code :

e3

Pin Count :

3

Case Connection :

COLLECTOR

Max Operating Temperature :

150°C

Transistor Type :

PNP - Pre-Biased

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Min Operating Temperature :

-65°C