PDTA113EMB,315

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Terminal Finish :

Tin (Sn)

Case Connection :

COLLECTOR

Frequency - Transition :

180MHz

Collector Emitter Voltage (VCEO) :

150mV

Factory Lead Time :

8 Weeks

Element Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 40mA 5V

Number of Pins :

3

Current - Collector Cutoff (Max) :

100nA ICBO

Vce Saturation (Max) @ Ib, Ic :

150mV @ 1.5mA, 30mA

Base Part Number :

PDTA113

Mounting Type :

Surface Mount

Max Power Dissipation :

250mW

Min Operating Temperature :

-65°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Package / Case :

3-XFDFN

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

JESD-609 Code :

e3

Terminal Position :

BOTTOM

Resistor - Base (R1) :

1 k Ω

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Pin Count :

3

Number of Elements :

1

Number of Terminations :

3

Transition Frequency :

180MHz

Collector Emitter Breakdown Voltage :

50V

Max Operating Temperature :

150°C

Transistor Type :

PNP - Pre-Biased

Mount :

Surface Mount

Resistor - Emitter Base (R2) :

1 k Ω

Transistor Application :

SWITCHING

Polarity/Channel Type :

PNP

Max Collector Current :

100mA