PDTA113EMB,315

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Transistor Type :

PNP - Pre-Biased

Polarity/Channel Type :

PNP

Mount :

Surface Mount

Terminal Position :

BOTTOM

Factory Lead Time :

8 Weeks

Max Power Dissipation :

250mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 40mA 5V

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Min Operating Temperature :

-65°C

Mounting Type :

Surface Mount

Element Configuration :

Single

Package / Case :

3-XFDFN

Vce Saturation (Max) @ Ib, Ic :

150mV @ 1.5mA, 30mA

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

50V

Current - Collector Cutoff (Max) :

100nA ICBO

Number of Pins :

3

Number of Terminations :

3

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

COLLECTOR

Resistor - Base (R1) :

1 k Ω

Radiation Hardening :

No

Transistor Application :

SWITCHING

Base Part Number :

PDTA113

Frequency - Transition :

180MHz

Packaging :

Tape and Reel (TR)

Pin Count :

3

Max Operating Temperature :

150°C

Max Collector Current :

100mA

RoHS Status :

ROHS3 Compliant

Transition Frequency :

180MHz

Collector Emitter Voltage (VCEO) :

150mV

Resistor - Emitter Base (R2) :

1 k Ω