PDTA113EMB,315

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Collector Emitter Voltage (VCEO) :

150mV

Transistor Application :

SWITCHING

Terminal Position :

BOTTOM

Case Connection :

COLLECTOR

Number of Terminations :

3

Transistor Type :

PNP - Pre-Biased

Package / Case :

3-XFDFN

Collector Emitter Breakdown Voltage :

50V

JESD-609 Code :

e3

Radiation Hardening :

No

Mount :

Surface Mount

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Max Operating Temperature :

150°C

Factory Lead Time :

8 Weeks

Resistor - Base (R1) :

1 k Ω

Element Configuration :

Single

Frequency - Transition :

180MHz

RoHS Status :

ROHS3 Compliant

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Pin Count :

3

Min Operating Temperature :

-65°C

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 40mA 5V

Transition Frequency :

180MHz

Polarity/Channel Type :

PNP

Terminal Finish :

Tin (Sn)

Max Power Dissipation :

250mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

100nA ICBO

Mounting Type :

Surface Mount

Max Collector Current :

100mA

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

150mV @ 1.5mA, 30mA

Resistor - Emitter Base (R2) :

1 k Ω

Base Part Number :

PDTA113