PDTA113EMB,315

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Collector Emitter Breakdown Voltage :

50V

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Package / Case :

3-XFDFN

Radiation Hardening :

No

Min Operating Temperature :

-65°C

Collector Emitter Voltage (VCEO) :

150mV

Base Part Number :

PDTA113

Terminal Position :

BOTTOM

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 40mA 5V

Number of Terminations :

3

Vce Saturation (Max) @ Ib, Ic :

150mV @ 1.5mA, 30mA

Factory Lead Time :

8 Weeks

Resistor - Base (R1) :

1 k Ω

Max Power Dissipation :

250mW

Max Operating Temperature :

150°C

Number of Elements :

1

Transition Frequency :

180MHz

Mount :

Surface Mount

Resistor - Emitter Base (R2) :

1 k Ω

Max Collector Current :

100mA

Frequency - Transition :

180MHz

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

100nA ICBO

Polarity/Channel Type :

PNP

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Transistor Type :

PNP - Pre-Biased

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Case Connection :

COLLECTOR