PDTA143EQAZ

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Packaging :

Tape and Reel (TR)

Polarity/Channel Type :

PNP

Collector Emitter Breakdown Voltage :

50V

Power - Max :

280mW

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Frequency - Transition :

180MHz

Terminal Form :

NO LEAD

Series :

Automotive, AEC-Q101

Current - Collector Cutoff (Max) :

1μA

Configuration :

SINGLE WITH BUILT-IN RESISTOR

JESD-30 Code :

R-PDSO-N3

Transistor Element Material :

SILICON

Transition Frequency :

180MHz

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Transistor Application :

SWITCHING

Transistor Type :

PNP - Pre-Biased

Number of Elements :

1

Max Power Dissipation :

280mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistor - Emitter Base (R2) :

4.7 k Ω

Number of Terminations :

3

Published :

2014

Resistor - Base (R1) :

4.7 k Ω

Mount :

Surface Mount

Reference Standard :

AEC-Q101; IEC-60134

Pin Count :

3

Factory Lead Time :

4 Weeks

Collector Emitter Voltage (VCEO) :

150mV

Package / Case :

3-XDFN Exposed Pad

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 10mA 5V

Case Connection :

COLLECTOR

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Max Collector Current :

100mA