PDTA124TE,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Terminal Position :

Dual

Power - Max :

150mW

Power Dissipation-Max (Abs) :

0.15W

Published :

2009

Additional Feature :

BUILT-IN BIAS RESISTOR

Time@Peak Reflow Temperature-Max (s) :

40

Current - Collector Cutoff (Max) :

1μA

JESD-609 Code :

e3

Transistor Type :

PNP - Pre-Biased

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Current - Collector (Ic) (Max) :

100mA

Transistor Element Material :

SILICON

Base Part Number :

PDTA124

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Package / Case :

SC-75, SOT-416

Polarity/Channel Type :

PNP

Operating Temperature (Max) :

150°C

Number of Terminations :

3

Voltage - Collector Emitter Breakdown (Max) :

50V

Surface Mount :

yes

Number of Elements :

1

Resistor - Base (R1) :

22 k Ω

Terminal Form :

Gull wing

Terminal Finish :

Tin (Sn)

Pin Count :

3

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Peak Reflow Temperature (Cel) :

260

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-G3