PDTA123YM,315

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Continuous Collector Current :

100mA

Length :

1.02mm

Collector Emitter Breakdown Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

Lead Free :

Lead Free

Width :

620μm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

1μA

Pin Count :

3

Polarity :

PNP

Package / Case :

SC-101, SOT-883

Radiation Hardening :

No

Height :

470μm

Transistor Type :

PNP - Pre-Biased

Number of Pins :

3

Max Power Dissipation :

250mW

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Factory Lead Time :

8 Weeks

Max Operating Temperature :

150°C

Case Connection :

COLLECTOR

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Terminal Finish :

Tin (Sn)

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 5V

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Min Operating Temperature :

-65°C

Resistor - Base (R1) :

2.2 k Ω

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Terminal Position :

BOTTOM

Max Collector Current :

100mA

Published :

2009

Resistor - Emitter Base (R2) :

10 k Ω

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 4.5

Number of Terminations :

3

Collector Emitter Voltage (VCEO) :

50V

ECCN Code :

EAR99

Number of Elements :

1

Mount :

Surface Mount

Base Part Number :

PDTA123