PDTA123YM,315

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Max Operating Temperature :

150°C

Transistor Type :

PNP - Pre-Biased

Mounting Type :

Surface Mount

Radiation Hardening :

No

Length :

1.02mm

Pin Count :

3

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 4.5

Base Part Number :

PDTA123

Published :

2009

Resistor - Base (R1) :

2.2 k Ω

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 5V

Packaging :

Tape and Reel (TR)

Number of Pins :

3

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

50V

Polarity :

PNP

Lead Free :

Lead Free

Width :

620μm

Package / Case :

SC-101, SOT-883

Case Connection :

COLLECTOR

Max Collector Current :

100mA

Continuous Collector Current :

100mA

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Height :

470μm

Mount :

Surface Mount

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

50V

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Min Operating Temperature :

-65°C

Current - Collector Cutoff (Max) :

1μA

Factory Lead Time :

8 Weeks

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Max Power Dissipation :

250mW

Terminal Position :

BOTTOM

Time@Peak Reflow Temperature-Max (s) :

30

Resistor - Emitter Base (R2) :

10 k Ω