PDTA123JQAZ

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

280mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 5V

Frequency - Transition :

180MHz

Terminal Form :

NO LEAD

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 21

Package / Case :

3-XDFN Exposed Pad

Max Collector Current :

100mA

Configuration :

SINGLE WITH BUILT-IN RESISTOR

JESD-30 Code :

R-PDSO-N3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2014

Resistor - Base (R1) :

2.2 k Ω

Packaging :

Tape and Reel (TR)

Reference Standard :

AEC-Q101; IEC-60134

Factory Lead Time :

4 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Transition Frequency :

180MHz

Pin Count :

3

Resistor - Emitter Base (R2) :

47 k Ω

Series :

Automotive, AEC-Q101

Power - Max :

280mW

Mount :

Surface Mount

Case Connection :

COLLECTOR

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

1μA

Terminal Position :

Dual

Transistor Type :

PNP - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Collector Emitter Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

100mV

Polarity/Channel Type :

PNP

Number of Terminations :

3