PDTA123EU,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Mounting Type :

Surface Mount

Published :

2004

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

40

Resistor - Base (R1) :

2.2 k Ω

HTS Code :

8541.21.00.95

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Resistor - Emitter Base (R2) :

2.2 k Ω

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Polarity :

PNP

Base Part Number :

PDTA123

Min Operating Temperature :

-65°C

Collector Emitter Breakdown Voltage :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 20mA 5V

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Terminal Position :

Dual

ECCN Code :

EAR99

Mount :

Surface Mount

Collector Emitter Voltage (VCEO) :

50V

JESD-609 Code :

e3

Element Configuration :

Single

Factory Lead Time :

4 Weeks

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Transistor Type :

PNP - Pre-Biased

Max Operating Temperature :

150°C

Current - Collector Cutoff (Max) :

1μA

Max Power Dissipation :

200mW

Terminal Finish :

Tin (Sn)

Max Collector Current :

100mA

Pin Count :

3

Lead Free :

Lead Free

Number of Pins :

3

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SC-70, SOT-323