PDTA115EU,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Collector Emitter Voltage (VCEO) :

50V

Resistor - Base (R1) :

100 k Ω

Lead Free :

Lead Free

Max Operating Temperature :

150°C

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Collector Emitter Breakdown Voltage :

50V

Mounting Type :

Surface Mount

Package / Case :

SC-70, SOT-323

Number of Elements :

1

Element Configuration :

Single

Vce Saturation (Max) @ Ib, Ic :

150mV @ 250µA, 5mA

Pin Count :

3

Factory Lead Time :

4 Weeks

Max Breakdown Voltage :

50V

Published :

2004

Current - Collector Cutoff (Max) :

1μA

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

Polarity :

PNP

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Number of Terminations :

3

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Min Operating Temperature :

-65°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Resistor - Emitter Base (R2) :

100 k Ω

Mount :

Surface Mount

Max Collector Current :

20mA

Max Power Dissipation :

200mW

Base Part Number :

PDTA115

Terminal Position :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Type :

PNP - Pre-Biased

Radiation Hardening :

No