PDTA115EMB,315

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Max Collector Current :

20mA

Collector Emitter Voltage (VCEO) :

150mV

Transistor Application :

SWITCHING

Max Power Dissipation :

250mW

Frequency - Transition :

180MHz

Min Operating Temperature :

-65°C

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Number of Terminations :

3

Polarity/Channel Type :

PNP

Pin Count :

3

Factory Lead Time :

8 Weeks

Transition Frequency :

180MHz

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Mount :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V

Package / Case :

3-XFDFN

Terminal Position :

BOTTOM

Transistor Type :

PNP - Pre-Biased

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Vce Saturation (Max) @ Ib, Ic :

150mV @ 250µA, 5mA

Base Part Number :

PDTA115

Max Operating Temperature :

150°C

Resistor - Emitter Base (R2) :

100 k Ω

JESD-609 Code :

e3

Case Connection :

COLLECTOR

Current - Collector Cutoff (Max) :

1μA

Number of Pins :

3

Collector Emitter Breakdown Voltage :

50V

Resistor - Base (R1) :

100 k Ω