PDTA114TS,126

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Resistor - Base (R1) :

10 k Ω

Terminal Position :

BOTTOM

Published :

2007

Pin Count :

3

Transistor Element Material :

SILICON

Number of Elements :

1

Transistor Application :

SWITCHING

Operating Temperature (Max) :

150°C

Voltage - Collector Emitter Breakdown (Max) :

50V

Surface Mount :

No

Current - Collector (Ic) (Max) :

100mA

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

HTS Code :

8541.21.00.95

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Polarity/Channel Type :

PNP

Transistor Type :

PNP - Pre-Biased

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Collector Cutoff (Max) :

1μA

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Terminal Finish :

Tin

Power - Max :

500mW

Base Part Number :

PDTA114

Mounting Type :

Through Hole

Additional Feature :

BUILT-IN BIAS RESISTOR

JESD-609 Code :

e3

Packaging :

Tape and Box (TB)

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1mA 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

O-PBCY-T3