PDTA114TK,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Time@Peak Reflow Temperature-Max (s) :

40

Current - Collector Cutoff (Max) :

1μA

Additional Feature :

BUILT IN BIAS RESISTOR

JEDEC-95 Code :

TO-236AB

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Current - Collector (Ic) (Max) :

100mA

Surface Mount :

yes

Power - Max :

250mW

Qualification Status :

Not Qualified

Polarity/Channel Type :

PNP

JESD-30 Code :

R-PDSO-G3

Terminal Form :

Gull wing

JESD-609 Code :

e3

Pin Count :

3

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Terminal Finish :

Tin

Transistor Element Material :

SILICON

HTS Code :

8541.21.00.95

Transistor Application :

SWITCHING

Published :

2007

Transistor Type :

PNP - Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1mA 5V

Voltage - Collector Emitter Breakdown (Max) :

50V

Mounting Type :

Surface Mount

Resistor - Base (R1) :

10 k Ω

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

PDTA114

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Operating Temperature (Max) :

150°C

Configuration :

SINGLE WITH BUILT-IN RESISTOR