PDTA114ES,126

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Resistor - Emitter Base (R2) :

10 k Ω

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Surface Mount :

No

Voltage - Collector Emitter Breakdown (Max) :

50V

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Packaging :

Tape and Box (TB)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin

Pin Count :

3

Current - Collector Cutoff (Max) :

1μA

Reach Compliance Code :

Unknown

Resistor - Base (R1) :

10 k Ω

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Power - Max :

500mW

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Polarity/Channel Type :

PNP

JESD-30 Code :

O-PBCY-T3

HTS Code :

8541.21.00.95

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Transistor Type :

PNP - Pre-Biased

Current - Collector (Ic) (Max) :

100mA

Number of Terminations :

3

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Published :

2004

Base Part Number :

PDTA114

Number of Elements :

1

Terminal Position :

BOTTOM